JAN1N6120

Semiconductor Devices and Associated Hardware

SEMICONDUCTOR DEVICE,DIODE

JAN1N6120

5961-01-175-8448

5961 - Semiconductor Devices and Associated Hardware

Military Specifications

SEMICONDUCTOR DEVICE,DIODE

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Technical Characteristics

  • Overall Diameter

    0.140 inches maximum

  • Internal Configuration

    junction contact

  • Internal Junction Configuration

    pn

  • Mounting Method

    terminal

  • Features Provided

    hermetically sealed case

  • Semiconductor Material

    silicon

  • Voltage Rating In Volts Per Characteristic

    35.1 maximum breakdown voltage,dc

  • Voltage Tolerance In Percent

    m5.0/p5.0

  • Power Rating Per Characteristic

    500.0 watts maximum reverse power dissipation,dc

  • Maximum Operating Temp Per Measurement Point

    175.0 deg celsius ambient air

  • Test Data Document

    81349-mil-s-19500 specification

  • Terminal Type And Quantity

    2 uninsulated wire lead

  • Inclosure Material

    glass

  • Overall Length

    0.185 inches maximum

  • Terminal Length

    1.000 inches minimum

  • Function For Which Designed

    transient suppressor

  • Current Rating Per Characteristic

    30.00 milliamperes maximum voltage regulator diode current

  • Specification/Standard Data

    81349-mil-s-19500/516 government specification

Certified to
AS6081 Methods

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