JANTXV1N6101

Technical Characteristics

• Test Data Document

  81349-mil-s-19500 specification (includes engineering type bulletins, brochures,etc., that reflect specification type data in specification format; excludes commercial catalogs, industry directories, and similar trade publications, reflecting general type

• ~1

  data on certain environmental and performanc

• Current Rating Per Characteristic

  200.00 milliamperes forward current, average absolute all semiconductor device diode

• Overall Width

  0.310 inches maximum

• Precious Material And Location

  terminals external surface gold

• Terminal Length

  0.260 inches maximum

• Power Rating Per Characteristic

  600.0 milliwatts small-signal input power, common-collector preset all semiconductor device diode

• Terminal Type And Quantity

  16 pin

• Semiconductor Material

  silicon all semiconductor device diode

• Overall Height

  0.200 inches maximum

• Mounting Method

  terminal

• Precious Material

  gold

• Voltage Rating In Volts Per Characteristic

  75.0 maximum breakdown voltage, dc all semiconductor device diode

• Inclosure Material

  glass

• Specification/Standard Data

  81349-mil-s-19500/474 government specification

• Overall Length

  0.785 inches maximum

• Maximum Operating Temp Per Measurement Point

  175.0 deg celsius ambient air

• Special Features

  all semiconductor device diode junction pattern arrangement: pn

• Component Name And Quantity

  8 semiconductor device diode

• Features Provided

  hermetically sealed case and quality assurance level txv