IRF320
Semiconductor Devices and Associated Hardware
TRANSISTOR
IRF320
5961 - Semiconductor Devices and Associated Hardware
Hamilton Sundstrand Corporation
TRANSISTOR
ACT NOW! SUBMIT A QUICK QUOTE.
Technical Characteristics
- 
                                    Internal Configurationfield effect 
- 
                                    Inclosure Materialmetal 
- 
                                    Overall Height0.450 inches maximum 
- 
                                    Joint Electronic Device Engineering Council/Jedec/Case Outline Designationto-3 
- 
                                    Power Rating Per Characteristic40.0 watts small-signal input power, common-collector absolute 
- 
                                    Channel Polarity And Control Type (Non-Core)n-channel junction type 
- 
                                    Features Providedhermetically sealed case 
- 
                                    Voltage Rating In Volts Per Characteristic400.0 maximum breakdown voltage, drain-to-source, with all other terminals short-circuited to source and 400.0 maximum drain to gate voltage 
- 
                                    Overall Width1.050 inches maximum 
- 
                                    Semiconductor Materialsilicon 
- 
                                    Overall Length1.527 inches maximum 
- 
                                    Current Rating Per Characteristic12.00 amperes source cutoff current maximum of standard range 
- 
                                    Terminal Type And Quantity2 pin and 1 case 
- 
                                    Mounting Facility Quantity2 
- 
                                    Maximum Operating Temp Per Measurement Point150.0 deg celsius junction 
- 
                                    Mounting Methodunthreaded hole 
Related Parts by Category
Related Parts by Manufacturer
 
     Certified to
        Certified toAS6081 Methods
 
     
     
    
    
    
     

 
    


