JANTX2N3847

Semiconductor Devices and Associated Hardware

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JANTX2N3847

5961-01-272-6273

5961 - Semiconductor Devices and Associated Hardware

Military Specifications

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Technical Characteristics

  • Mounting Method

    threaded stud

  • Electrode Internally-Electrically Connected To Case

    collector

  • Mounting Facility Quantity

    1

  • Transfer Ratio

    12.0 minimum static forward current transfer ratio, common-emitter and 60.0 maximum static forward current transfer ratio, common-emitter

  • Thread Series Designator

    unf

  • Internal Configuration

    junction contact

  • Special Features

    junction pattern arrangement: npn

  • Terminal Type And Quantity

    3 tab, solder lug

  • Specification/Standard Data

    81349-mil-s-19500/412 government specification

  • Maximum Operating Temp Per Measurement Point

    175.0 deg celsius ambient air

  • Semiconductor Material

    silicon

  • Overall Width Across Flats

    0.875 inches maximum

  • Voltage Rating In Volts Per Characteristic

    400.0 maximum collector to base voltage/static/emitter open and 300.0 maximum collector to emitter voltage/static/base open and 10.0 maximum emitter to base voltage, static, collector open

  • Nominal Thread Size

    0.312 inches

  • Power Rating Per Characteristic

    150.0 watts small-signal input power, common-collector preset

  • Precious Material And Location

    terminal surface option gold

  • Inclosure Material

    metal

  • Current Rating Per Characteristic

    20.00 amperes source cutoff current maximum

  • Overall Length

    1.525 inches maximum

  • Joint Electronic Device Engineering Council/Jedec/Case Outline Designation

    to-63

  • ~1

    data on certain environmental and performanc

  • Test Data Document

    81349-mil-s-19500 specification (includes engineering type bulletins, brochures,etc., that reflect specification type data in specification format; excludes commercial catalogs, industry directories, and similar trade publications, reflecting general type

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