MIL-S-19500/412
Semiconductor Devices and Associated Hardware
TRANSISTOR
MIL-S-19500/412
5961 - Semiconductor Devices and Associated Hardware
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Technical Characteristics
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Mounting Method
threaded stud
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Electrode Internally-Electrically Connected To Case
collector
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Mounting Facility Quantity
1
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Transfer Ratio
12.0 minimum static forward current transfer ratio, common-emitter and 60.0 maximum static forward current transfer ratio, common-emitter
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Thread Series Designator
unf
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Internal Configuration
junction contact
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Special Features
junction pattern arrangement: npn
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Terminal Type And Quantity
3 tab, solder lug
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Specification/Standard Data
81349-mil-s-19500/412 government specification
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Maximum Operating Temp Per Measurement Point
175.0 deg celsius ambient air
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Semiconductor Material
silicon
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Overall Width Across Flats
0.875 inches maximum
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Voltage Rating In Volts Per Characteristic
400.0 maximum collector to base voltage/static/emitter open and 300.0 maximum collector to emitter voltage/static/base open and 10.0 maximum emitter to base voltage, static, collector open
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Nominal Thread Size
0.312 inches
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Power Rating Per Characteristic
150.0 watts small-signal input power, common-collector preset
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Precious Material And Location
terminal surface option gold
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Inclosure Material
metal
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Current Rating Per Characteristic
20.00 amperes source cutoff current maximum
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Overall Length
1.525 inches maximum
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Joint Electronic Device Engineering Council/Jedec/Case Outline Designation
to-63
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~1
data on certain environmental and performanc
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Test Data Document
81349-mil-s-19500 specification (includes engineering type bulletins, brochures,etc., that reflect specification type data in specification format; excludes commercial catalogs, industry directories, and similar trade publications, reflecting general type
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AS6081 Methods



