OMS1085
Semiconductor Devices and Associated Hardware
SEMICONDUCTOR DEVICE,PHOTO
OMS1085
5961 - Semiconductor Devices and Associated Hardware
SEMICONDUCTOR DEVICE,PHOTO
ACT NOW! SUBMIT A QUICK QUOTE.
Technical Characteristics
-
Terminal Type And Quantity
3 uninsulated wire lead
-
Mounting Method
terminal
-
Overall Diameter
0.209 inches minimum and 0.230 inches maximum
-
Current Rating Per Characteristic
50.00 milliamperes peak forward surge current nominal and 100.00 nanoamperes repetitive peak forward current peak
-
Test Data Document
53711-5366069 drawing (this is the basic governing drawing, such as a contractor drawing, original equipment manufacturer drawing, etc.; excludes any specification, standard or other document that may be referenced in a basic governing drawing)
-
Internal Configuration
junction contact
-
Features Provided
hermetically sealed case
-
Power Rating Per Characteristic
250.0 milliwatts small-signal input power, common-collector absolute
-
End Item Identification
aegis
-
Overall Length
0.225 inches minimum and 0.255 inches maximum
-
Terminal Length
0.500 inches minimum
-
Function For Which Designed
phototransistor and amplifier
-
Semiconductor Material
gallium arsenide
-
Maximum Operating Temp Per Measurement Point
150.0 deg celsius junction
-
Joint Electronic Device Engineering Council/Jedec/Case Outline Designation
to-18
-
Voltage Rating In Volts Per Characteristic
25.0 maximum collector to emitter voltage/static/base open and 25.0 maximum collector to base voltage/static/emitter open and 5.0 maximum emitter to collector voltage, dc
-
Inclosure Material
metal and glass
-
Terminal Circle Diameter
0.100 inches nominal
-
Special Features
base lead 0.05 in. max.; internal junction configuration: npn