31301037GO2

Technical Characteristics

• Features Provided

  hermetically sealed and burn in and monolithic and positive outputs

• Design Function And Quantity

  4 gate, nand

• Test Data Document

  96906-mil-std-883 standard (includes industry or association standards, individual manufactureer standards, etc.).

• Output Logic Form

  complementary-metal oxide-semiconductor logic

• Body Height

  0.140 inches minimum and 0.185 inches maximum

• Storage Temp Range

  -65.0/+150.0 deg celsius

• Body Width

  0.220 inches minimum and 0.310 inches maximum

• Inclosure Material

  ceramic

• Terminal Surface Treatment

  solder

• Case Outline Source And Designator

  d-1 mil-m-38510

• Inclosure Configuration

  dual-in-line

• Maximum Power Dissipation Rating

  200.0 milliwatts

• Voltage Rating And Type Per Characteristic

  -0.5 volts minimum power source and 18.0 volts maximum power source

• Body Length

  0.785 inches maximum

• Special Features

  item must comply with requirements of defense electronics supply center production standard no. l04081; for navy nuclear propulsion plant products only

• Time Rating Per Chacteristic

  250.00 nanoseconds maximum propagation delay time, low to high level output and 250.00 nanoseconds maximum propagation delay time, high to low level output

• Input Circuit Pattern

  quad 2 input

• Terminal Type And Quantity

  14 printed circuit

• Criticality Code Justification

  feat

• End Item Identification

  nuclear power plants

• Operating Temp Range

  -55.0/+125.0 deg celsius