SNF1196
Semiconductor Devices and Associated Hardware
TRANSISTOR
SNF1196
5961 - Semiconductor Devices and Associated Hardware
TRANSISTOR
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Technical Characteristics
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Channel Polarity And Control Type
n-channel insulated gate type
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Joint Electronic Device Engineering Council/Jedec/Case Outline Designation
to-210ac
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Field Force Effect Type
electrostatic charge
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Semiconductor Material
silicon
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Precious Material And Location
terminal surface option gold
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Precious Material
gold
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Current Rating Per Characteristic
120.00 amperes maximum off-state current, peak
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Power Rating Per Characteristic
150.0 watts maximum total power dissipation
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Maximum Operating Temp Per Measurement Point
150.0 deg celsius ambient air
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Test Data Document
89954-312a5072 drawing
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Thread Series Designator
unf
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Terminal Type And Quantity
3 tab, solder lug
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Inclosure Material
metal
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Overall Length
1.330 inches maximum
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Function For Which Designed
switching
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Mounting Facility Quantity
1
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Internal Configuration
field effect
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Mounting Method
threaded stud
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Overall Width Across Flats
0.687 inches maximum
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Nominal Thread Size
0.250 inches
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~1
d 20.0 maximum gate to source voltage
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Voltage Rating In Volts Per Characteristic
100.0 maximum drain to gate voltage and 100.0 maximum drain to source voltage an
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Certified toAS6081 Methods




