BDV65B

Technical Characteristics

• Overall Height

  4.6 millimeters maximum

• Internal Configuration

  junction contact-darlington connected

• Overall Width

  15.2 millimeters maximum

• Inclosure Material

  plastic

• Mounting Method

  terminal and unthreaded hole

• Semiconductor Material

  silicon

• Terminal Length

  13.6 millimeters minimum

• Overall Length

  21.0 millimeters maximum

• Current Rating Per Characteristic

  10.00 amperes source cutoff current maximum

• Special Features

  junction pattern arrangement: npn

• Maximum Operating Temp Per Measurement Point

  165.0 deg celsius junction

• Power Rating Per Characteristic

  125.0 watts small-signal input power, common-collector minimum

• Transfer Ratio

  1.0 minimum static forward current transfer ratio, common-emitter

• Voltage Rating In Volts Per Characteristic

  100.0 maximum breakdown voltage, collector-to-base, emitter open

• Terminal Type And Quantity

  3 uninsulated wire lead

• Mounting Facility Quantity

  1

• Electrode Internally-Electrically Connected To Case

  collector