NE-41635

Semiconductor Devices and Associated Hardware

TRANSISTOR

NE-41635

5961-01-318-0121

5961 - Semiconductor Devices and Associated Hardware

Nec Electronics U S A Inc

TRANSISTOR

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Technical Characteristics

  • Semiconductor Material

    silicon

  • Voltage Rating In Volts Per Characteristic

    18.0 minimum breakdown voltage, collector-to-emitter, base open

  • Terminal Type And Quantity

    4 ribbon

  • Mounting Method

    press fit

  • Maximum Operating Temp Per Measurement Point

    175.0 deg celsius junction

  • Overall Length

    1.8 millimeters nominal

  • Transfer Ratio

    30.0 minimum static forward current transfer ratio, common-emitter and 200.0 maximum static forward current transfer ratio, common-emitter

  • Inclosure Material

    ceramic

  • Overall Height

    12.0 millimeters nominal

  • Power Rating Per Characteristic

    600.0 milliwatts small-signal input power, common-collector absolute

  • Current Rating Per Characteristic

    100.00 milliamperes source cutoff current maximum

  • Internal Configuration

    junction contact

  • Special Features

    junction pattern arrangement: npn

  • Overall Width

    12.0 millimeters nominal

Certified to
AS6081 Methods

Implementing Quality Procurement

A rigorous vendor selection process and vendor management system are essential to ensuring quality.
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Supplying Quality Products

We take every measure to ensure that we supply quality, authentic parts including a strict vendor selection process and rigorous product inspections..
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Providing Quality People

Our team of dedicated account managers, procurement professionals and specialized inspectors is the most valuable resource we have.
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