501A1015-11

Semiconductor Devices and Associated Hardware

TRANSISTOR

501A1015-11

5961-01-318-5975

5961 - Semiconductor Devices and Associated Hardware

L-3 Communications Avionics Systems

TRANSISTOR

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Technical Characteristics

  • Inclosure Material

    metal

  • Internal Configuration

    junction contact

  • Mounting Method

    press fit

  • Features Provided

    hermetically sealed case

  • Semiconductor Material

    silicon

  • ~1

    ector to emitter voltage, dc with base short-circuited to emitter and 4.0 maximu

  • Voltage Rating In Volts Per Characteristic

    60.0 maximum collector to base voltage/static/emitter open and 60.0 maximum coll

  • Current Rating Per Characteristic

    1.00 amperes maximum collector current, dc

  • Power Rating Per Characteristic

    175.0 watts maximum total device dissipation

  • Overall Length

    27.7 millimeters maximum

  • Overall Height

    3.43 millimeters maximum

  • Overall Width

    27.7 millimeters maximum

  • Electrode Internally-Electrically Connected To Case

    collector

  • Internal Junction Configuration

    npn

  • ~2

    m emitter to base voltage, static, collector open

  • ~1

    imum static forward current transfer ratio, common-emitter

  • Transfer Ratio

    10.0 minimum static forward current transfer ratio, common-emitter and 100.0 max

  • Terminal Type And Quantity

    4 ribbon

Certified to
AS6081 Methods

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