2N6673
Semiconductor Devices and Associated Hardware
TRANSISTOR
2N6673
5961 - Semiconductor Devices and Associated Hardware
TRANSISTOR
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Technical Characteristics
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Maximum Operating Temp Per Measurement Point
200.0 deg celsius junction
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Overall Width
1.010 inches nominal
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Mounting Method
unthreaded hole
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Inclosure Material
metal
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Electrode Internally-Electrically Connected To Case
collector
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Overall Height
0.300 inches nominal
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Internal Configuration
junction contact
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Current Rating Per Characteristic
8.00 amperes source cutoff current maximum and 4.00 amperes source cutoff current minimum
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Special Features
junction pattern arrangement: npn
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Overall Length
1.579 inches nominal
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Features Provided
hermetically sealed case
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Joint Electronic Device Engineering Council/Jedec/Case Outline Designation
to-204ma
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Semiconductor Material
silicon
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Power Rating Per Characteristic
150.0 watts small-signal input power, common-collector preset
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Function For Which Designed
switching
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Terminal Type And Quantity
2 pin and 1 case
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Mounting Facility Quantity
2
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~1
emitter to base voltage, static, collector open
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Voltage Rating In Volts Per Characteristic
400.0 maximum collector to emitter voltage/static/base open and 650.0 maximum collector-to-emitter, with voltage between base and emitter and 450.0 maximum collector to emitter voltage, dc with specified circuit between base and emitter and 8.0 maximum
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AS6081 Methods



