JANTXV2N6792
Semiconductor Devices and Associated Hardware
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JANTXV2N6792
5961 - Semiconductor Devices and Associated Hardware
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Technical Characteristics
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Overall Diameter
0.335 inches minimum and 0.370 inches maximum
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Internal Configuration
field effect
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Channel Polarity And Control Type
n-channel insulated gate type
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Joint Electronic Device Engineering Council/Jedec/Case Outline Designation
to-205
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Electrode Internally-Electrically Connected To Case
drain
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Field Force Effect Type
electrostatic charge
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Voltage Rating In Volts Per Characteristic
400.0 maximum drain to source voltage and 400.0 maximum drain to gate voltage
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Power Rating Per Characteristic
20.0 watts maximum total power dissipation
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Maximum Operating Temp Per Measurement Point
150.0 deg celsius junction
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Specification/Standard Data
81349-mil-s-19500/555 government specification
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Terminal Circle Diameter
0.200 inches nominal
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Features Provided
burn in and electrostatic sensitive and quality assurance level txv
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Semiconductor Material
silicon
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Current Rating Per Characteristic
10.00 amperes maximum off-state current, peak
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Special Features
nuclear hardness critical items
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Nuclear Hardness Critical Feature
hardened
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Test Data Document
81349-mil-s-19500 specification
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Terminal Type And Quantity
3 uninsulated wire lead
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Inclosure Material
metal
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Overall Length
0.160 inches minimum and 0.180 inches maximum
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Terminal Length
0.500 inches minimum and 0.750 inches maximum
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Mounting Method
terminal
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AS6081 Methods



