313R306H01
Microcircuits, Electronic
MICROCIRCUIT,MEMORY
313R306H01
5962 - Microcircuits, Electronic
Northrop Grumman Systems Corporation
MICROCIRCUIT,MEMORY
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Technical Characteristics
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Voltage Rating And Type Per Characteristic
-0.5 volts minimum power source and 7.0 volts maximum power source
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Test Data Document
96906-mil-std-883 standard (includes industry or association standards, individual manufactureer standards, etc.).
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Bit Quantity (Non-Core)
8192
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Output Logic Form
complementary-metal oxide-semiconductor logic
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Storage Temp Range
-65.0/+150.0 deg celsius
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Memory Device Type
rom
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Inclosure Material
ceramic
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Terminal Surface Treatment
solder
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Input Circuit Pattern
5 input
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Maximum Power Dissipation Rating
1.02 watts
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Case Outline Source And Designator
f-6 mil-m-38510
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Features Provided
monolithic and burn in and programmable
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Operating Temp Range
-55.0/+125.0 deg celsius
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Inclosure Configuration
flat pack
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Terminal Type And Quantity
24 flat leads
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AS6081 Methods



