ROM/PROM

Technical Characteristics

• ~1

  data on certain environmental and performanc

• Test Data Document

  81349-mil-n-38510 specification (includes engineering type bulletins, brochures,etc., that reflect specification type data in specification format; excludes commercial catalogs, industry directories, and similar trade publications, reflecting general type

• Bit Quantity (Non-Core)

  4096

• Output Logic Form

  bipolar metal-oxide semiconductor

• End Item Identification

  an/fps-124(ssradar)

• Maximum Power Dissipation Rating

  880.0 milliwatts

• Operating Temp Range

  -55.0/+125.0 deg celsius

• Current Rating Per Characteristic

  -30.00 milliamperes collector cutoff current, dc, base open absolute and 5.00 milliamperes average forward current averaged over a full 60-hz cycle absolute

• Hybrid Technology Type

  monolithic

• Memory Device Type

  prom

• Storage Temp Range

  -65.0/+150.0 deg celsius

• Case Outline Source And Designator

  d-8 mil-m-38510

• Inclosure Material

  ceramic

• Terminal Surface Treatment

  solder

• Voltage Rating And Type Per Characteristic

  -0.5 volts minimum total supply and 7.0 volts maximum total supply

• Specification/Standard Data

  67268-5962-8769002ra government standard and 56232-1219251-206 manufacturers source control

• Part Name Assigned By Controlling Agency

  microcircuit,digital,schottky,bipolar 512 x 8 - bit prom

• Features Provided

  programmed and bipolar

• Terminal Type And Quantity

  20 printed circuit

• Time Rating Per Chacteristic

  45.00 nanoseconds nominal access

• Inclosure Configuration

  dual-in-line

• Departure From Cited Designator

  altered by programming,marking & testing