DR511-1832-013H

Technical Characteristics

• Part Name Assigned By Controlling Agency

  microcircuit, digital, monolithic 256k (32k x 8-bit) cmos, static random access memory (sram)

• Operating Temp Range

  -55.0/+125.0 deg celsius

• Criticality Code Justification

  feat

• Bit Quantity (Non-Core)

  262144

• End Item Identification

  pacer dawn

• Storage Temp Range

  -65.0/+125.0 deg celsius

• Word Quantity (Non-Core)

  32768

• Time Rating Per Chacteristic

  45.00 nanoseconds maximum propagation delay time, low to high level output and 45.00 nanoseconds maximum propagation delay time, high to low level output

• Memory Device Type

  ram

• Output Logic Form

  complementary-metal oxide-semiconductor logic

• Inclosure Material

  ceramic

• Voltage Rating And Type Per Characteristic

  -0.5 volts maximum power source and 7.0 volts maximum power source

• Terminal Type And Quantity

  28 pin

• Maximum Power Dissipation Rating

  1.0 watts

• Terminal Surface Treatment

  solder

• Special Features

  esd

• Case Outline Source And Designator

  d-10 mil-m-38510

• Inclosure Configuration

  dual-in-line