205-0350-010

Technical Characteristics

• Operating Temp Range

  -55.0/+125.0 deg celsius

• Voltage Rating And Type Per Characteristic

  -0.5 volts minimum power source and 12.0 volts maximum power source

• Part Name Assigned By Controlling Agency

  registered and-or gate array

• Memory Device Type

  pal

• Body Height

  0.185 inches maximum

• Current Rating Per Characteristic

  210.00 milliamperes reverse current, dc absolute

• Test Data Document

  96906-mil-std-883 standard (includes industry or association standards, individual manufactureer standards, etc.).

• Storage Temp Range

  -65.0/+150.0 deg celsius

• Body Width

  0.220 inches minimum and 0.310 inches maximum

• Inclosure Material

  ceramic

• Terminal Surface Treatment

  solder

• Time Rating Per Chacteristic

  30.00 nanoseconds maximum propagation delay time, high to low level output and 30.00 nanoseconds maximum propagation delay time, low to high level output

• Case Outline Source And Designator

  d-9 mil-m-38510

• Inclosure Configuration

  dual-in-line

• Features Provided

  programmed and electrostatic sensitive and monolithic and high impedance and w/clock and bipolar

• Terminal Type And Quantity

  24 printed circuit

• Maximum Power Dissipation Rating

  1.2 watts

• Body Length

  1.280 inches maximum

• Output Logic Form

  transistor-transistor logic