ROM/PROM
Microcircuits, Electronic
MICROCIRCUIT,MEMORY
ROM/PROM
5962 - Microcircuits, Electronic
Defense Electronics Supply Center
MICROCIRCUIT,MEMORY
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Technical Characteristics
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Operating Temp Range
-55.0/+125.0 deg celsius
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Voltage Rating And Type Per Characteristic
-0.5 volts minimum power source and 12.0 volts maximum power source
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Part Name Assigned By Controlling Agency
registered and-or gate array
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Memory Device Type
pal
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Body Height
0.185 inches maximum
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Current Rating Per Characteristic
210.00 milliamperes reverse current, dc absolute
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Test Data Document
96906-mil-std-883 standard (includes industry or association standards, individual manufactureer standards, etc.).
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Storage Temp Range
-65.0/+150.0 deg celsius
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Body Width
0.220 inches minimum and 0.310 inches maximum
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Inclosure Material
ceramic
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Terminal Surface Treatment
solder
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Time Rating Per Chacteristic
30.00 nanoseconds maximum propagation delay time, high to low level output and 30.00 nanoseconds maximum propagation delay time, low to high level output
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Case Outline Source And Designator
d-9 mil-m-38510
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Inclosure Configuration
dual-in-line
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Features Provided
programmed and electrostatic sensitive and monolithic and high impedance and w/clock and bipolar
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Terminal Type And Quantity
24 printed circuit
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Maximum Power Dissipation Rating
1.2 watts
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Body Length
1.280 inches maximum
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Output Logic Form
transistor-transistor logic