IXTM5N100A
Semiconductor Devices and Associated Hardware
TRANSISTOR
IXTM5N100A
5961 - Semiconductor Devices and Associated Hardware
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Technical Characteristics
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Semiconductor Material
silicon
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Overall Width
1.050 inches maximum
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Voltage Rating In Volts Per Characteristic
1000.0 minimum breakdown voltage, drain-to-source, with all other terminals short-circuited to source and 20.0 maximum gate to source voltage
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Electrode Internally-Electrically Connected To Case
drain
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Power Rating Per Characteristic
150.0 watts small-signal input power, common-collector absolute
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Overall Height
0.495 inches maximum
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Channel Polarity And Control Type (Non-Core)
n-channel insulated gate type
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Overall Length
1.540 inches maximum
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Test Data Document
90536-7920719 drawing (this is the basic governing drawing, such as a contractor drawing, original equipment manufacturer drawing, etc.; excludes any specification, standard or other document that may be referenced in a basic governing drawing)
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Inclosure Material
metal
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Internal Configuration
field effect
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Mounting Method
unthreaded hole
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Maximum Operating Temp Per Measurement Point
150.0 deg celsius junction
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Mounting Facility Quantity
2
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Terminal Type And Quantity
2 pin and 1 case
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Current Rating Per Characteristic
6.00 amperes source cutoff current maximum of standard range and 22.00 amperes forward current, average any acceptable
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AS6081 Methods



