5165104-1

Technical Characteristics

• Time Rating Per Chacteristic

  25.00 nanoseconds af output megawatts

• Operating Temp Range

  -55.0/+125.0 deg celsius

• Memory Device Type

  pal

• Voltage Rating And Type Per Characteristic

  -0.5 volts minimum power source and 7.0 volts maximum power source

• Features Provided

  ultraviolet erasable and monolithic

• Input Circuit Pattern

  22 input

• Test Data Document

  96906-mil-std-883 standard (includes industry or association standards, individual manufactureer standards, etc.).

• Output Logic Form

  complementary-metal oxide-semiconductor logic

• Storage Temp Range

  -65.0/+150.0 deg celsius

• Part Name Assigned By Controlling Agency

  microcircuit, digital, memory, cmos, uv erasable-programming, logic array

• Special Features

  this item shall be made from an unprogrammed device in accordance with smd specifications 5962-8872401lx

• End Item Identification

  c141 awcfs gp

• Inclosure Configuration

  dual-in-line

• Terminal Type And Quantity

  24 printed circuit

• Maximum Power Dissipation Rating

  1.2 watts