CY7C420-65DMB

Technical Characteristics

• Memory Device Type

  first-in first-out

• Operating Temp Range

  -55.0/+125.0 deg celsius

• Part Name Assigned By Controlling Agency

  microcircuit, digital, memory, cmos, parallel 512 x 9 fifo, monolithic silicon

• Voltage Rating And Type Per Characteristic

  -0.5 volts minimum power source and 7.0 volts maximum power source

• Body Length

  1.490 inches maximum

• Time Rating Per Chacteristic

  65.00 nanoseconds af output megawatts

• Test Data Document

  96906-mil-std-883 standard (includes industry or association standards, individual manufactureer standards, etc.).

• Output Logic Form

  complementary-metal oxide-semiconductor logic

• Storage Temp Range

  -65.0/+150.0 deg celsius

• Features Provided

  monolithic

• Body Width

  0.610 inches maximum

• Maximum Power Dissipation Rating

  1.0 watts

• Word Quantity (Non-Core)

  4608

• Terminal Type And Quantity

  28 printed circuit

• Inclosure Configuration

  dual-in-line

• Body Height

  0.232 inches maximum

• End Item Identification

  1430011315427