NSN: 5961-00-068-7090

Technical Characteristics

• ~1

  device diode

• Semiconductor Material

  silicon all semiconductor device diode

• Component Function Relationship

  matched

• Overall Diameter

  0.096 inches nominal all semiconductor device diode

• Inclosure Material

  glass all semiconductor device diode

• Internal Configuration

  junction contact all semiconductor device diode

• Current Rating Per Characteristic

  200.00 milliamperes source cutoff current preset all semiconductor device diode and 450.00 milliamperes source cutoff current outside diameter all semiconductor device diode and 15.00 milliamperes forward current, total rms megahertz all semiconductor

• Joint Electronic Device Engineering Council/Jedec/Case Outline Designation

  do-7 all semiconductor device diode

• Terminal Length

  1.000 inches minimum all semiconductor device diode

• Terminal Type And Quantity

  2 uninsulated wire lead all semiconductor device diode

• Internal Junction Configuration

  pn all semiconductor device diode

• Overall Length

  0.265 inches nominal all semiconductor device diode

• Maximum Operating Temp Per Measurement Point

  150.0 deg celsius junction all semiconductor device diode

• Power Rating Per Characteristic

  500.0 milliwatts small-signal input power, common-collector preset all semiconductor device diode

• Component Name And Quantity

  10 semiconductor device diode

• Mounting Method

  terminal all semiconductor device diode

• Voltage Rating In Volts Per Characteristic

  50.0 maximum reverse voltage, peak all semiconductor device diode