NSN: 5961-00-164-3277

Technical Characteristics

• Mounting Facility Quantity

  2

• Internal Configuration

  junction contact

• Electrode Internally-Electrically Connected To Case

  collector

• Internal Junction Configuration

  npn

• Features Provided

  burn in and hermetically sealed case

• Semiconductor Material

  silicon

• ~1

  voltage,resistance between base and emitter and 90.0 maximum collector-to-emitter substaining voltage,with voltage between base and emitter

• Voltage Rating In Volts Per Characteristic

  90.0 maximum breakdown voltage,collector-to-base,emitter open and 7.0 maximum emitter to base voltage,static,collector open and 55.0 maximum collector-to-emitter,substaining voltage,base open-circuited and 60.0 maximum collector-to-emitter substaining

• Power Rating Per Characteristic

  29.0 watts maximum total power dissipation

• Terminal Type And Quantity

  2 pin

• Inclosure Material

  metal

• Overall Length

  1.252 inches maximum

• Overall Width

  0.700 inches maximum

• Overall Height

  0.250 inches minimum and 0.340 inches maximum

• Mounting Method

  unthreaded hole

• Current Rating Per Characteristic

  2.00 amperes maximum base current,dc and 4.00 amperes maximum collector current,dc

• Maximum Operating Temp Per Measurement Point

  200.0 deg celsius junction