NSN: 5961-00-284-7002
Semiconductor Devices and Associated Hardware
TRANSISTOR
5961 - Semiconductor Devices and Associated Hardware
TRANSISTOR
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Technical Characteristics
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Power Rating Per Characteristic
310.0 milliwatts small-signal input power, common-collector absolute
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Terminal Type And Quantity
3 uninsulated wire lead
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Mounting Method
terminal
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Voltage Rating In Volts Per Characteristic
-40.0 maximum breakdown voltage, collector-to-base, emitter open and -5.0 maximum breakdown voltage, emitter-to-base, collector open and -40.0 maximum breakdown voltage, collector-to-emitter, base open
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Special Features
junction pattern arrangement: pnp
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Electrode Internally-Electrically Connected To Case
emitter
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Internal Configuration
junction contact
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Maximum Operating Temp Per Measurement Point
135.0 deg celsius junction
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Current Rating Per Characteristic
200.00 milliamperes source cutoff current major
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Terminal Circle Diameter
0.110 inches maximum
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Semiconductor Material
silicon
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Overall Diameter
0.220 inches maximum
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Inclosure Material
plastic
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Terminal Length
0.500 inches minimum
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Overall Length
0.190 inches maximum