NSN: 5961-00-313-0104
Semiconductor Devices and Associated Hardware
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5961 - Semiconductor Devices and Associated Hardware
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Technical Characteristics
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~1
85deg. c. temperature coefficient at minus 8 d
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General Characteristics Item Description
silicon planar epitaxal diode. 250picofarad. 100 v max. reverse current at 8 microampers.minimum q of 160 at minus 8 v. q measured at 25 megahertz.working voltage minus 100 at 25 deg. c. reverse voltageminus 115 v at 25 deg. c. max operating temperature
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