NSN: 5961-00-420-2207
Semiconductor Devices and Associated Hardware
SEMICONDUCTOR DEVICE,THYRISTOR
5961 - Semiconductor Devices and Associated Hardware
SEMICONDUCTOR DEVICE,THYRISTOR
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Technical Characteristics
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Mounting Facility Quantity
1
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Overall Width Across Flats
1.047 inches nominal
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~1
nal open-circuited and 600.0 maximum repetitive peak reverse voltage, maximum pe
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Voltage Rating In Volts Per Characteristic
500.0 maximum working peak reverse voltage, maximum peak total value, gate termi
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Current Rating Per Characteristic
100.00 milliamperes maximum gate trigger current, dc
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Power Rating Per Characteristic
10.0 watts maximum peak gate power dissipation
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Thread Series Designator
unf
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Inclosure Material
metal
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Overall Length
0.952 inches nominal
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Electrode Internally-Electrically Connected To Case
anode
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Mounting Method
threaded stud
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Features Provided
hermetically sealed case
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Nominal Thread Size
0.500 inches
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Semiconductor Material
silicon
 - 
                                    
~2
ak total value, gate terminal open-circuited
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Maximum Operating Temp Per Measurement Point
125.0 deg celsius junction
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Terminal Type And Quantity
1 threaded stud and 2 insulated wire lead w/terminal lug
 
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