NSN: 5961-00-626-4034

Semiconductor Devices and Associated Hardware

TRANSISTOR

5961 - Semiconductor Devices and Associated Hardware

TRANSISTOR

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Technical Characteristics

  • Terminal Type And Quantity

    3 uninsulated wire lead

  • Maximum Operating Temp Per Measurement Point

    200.0 deg celsius junction

  • Power Rating Per Characteristic

    300.0 milliwatts maximum collector power dissipation

  • Voltage Rating In Volts Per Characteristic

    45.0 maximum breakdown voltage, collector-to-base, emitter open and 45.0 maximum breakdown voltage, collector-to-emitter, base open and 5.0 maximum breakdown voltage, emitter-to-base, collector open

  • Semiconductor Material

    silicon

  • Terminal Circle Diameter

    0.100 inches nominal

  • Electrode Internally-Electrically Connected To Case

    collector

  • Internal Configuration

    junction contact

  • Overall Length

    5.3 millimeters maximum

  • Inclosure Material

    metal

  • Current Rating Per Characteristic

    500.00 milliamperes maximum collector current, dc

  • Mounting Method

    terminal

  • Internal Junction Configuration

    npn

  • Overall Diameter

    5.800 millimeters maximum

  • Terminal Length

    0.500 inches minimum

Related Manufacturers

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AS6081 Methods

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