NSN: 5961-00-912-3577

Semiconductor Devices and Associated Hardware

TRANSISTOR

5961 - Semiconductor Devices and Associated Hardware

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Technical Characteristics

  • Inclosure Material

    metal

  • Overall Diameter

    0.600 inches nominal

  • Mounting Method

    unthreaded hole

  • Voltage Rating In Volts Per Characteristic

    60.0 maximum breakdown voltage,collector-to-base,emitter open and 40.0 maximum breakdown voltage,collector-to-emitter,base open and 12.0 maximum breakdown voltage,emitter-to-base,collector open

  • Current Rating Per Characteristic

    1.50 amperes maximum base current,dc and 1.30 amperes maximum collector current,dc and 40.00 amperes maximum collector cutoff current,dc,emitter open

  • Maximum Operating Temp Per Measurement Point

    200.0 deg celsius junction

  • Overall Length

    0.300 inches nominal

  • Mounting Facility Quantity

    2

  • Internal Configuration

    junction contact

  • Electrode Internally-Electrically Connected To Case

    collector

  • Internal Junction Configuration

    npn

  • Semiconductor Material

    silicon

  • Power Rating Per Characteristic

    142.0 milliwatts maximum total power dissipation

  • Terminal Type And Quantity

    2 uninsulated wire lead and 1 tab,solder lug

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