NSN: 5961-01-069-8650

Technical Characteristics

• ~1

  breakdown voltage, emitter-to-base, collector

• Features Provided

  hermetically sealed case

• Semiconductor Material

  silicon

• Maximum Operating Temp Per Measurement Point

  200.0 deg celsius junction

• Terminal Type And Quantity

  3 pin

• Inclosure Material

  metal

• Current Rating Per Characteristic

  2.50 amperes source cutoff current maximum

• Power Rating Per Characteristic

  17.5 watts small-signal input power, common-collector preset

• Mounting Method

  threaded stud

• Overall Width Across Flats

  0.424 inches minimum and 0.437 inches maximum

• Mounting Facility Quantity

  1

• Nominal Thread Size

  0.190 inches

• Thread Series Designator

  unf

• Overall Length

  0.215 inches minimum and 0.320 inches maximum

• Internal Configuration

  junction contact

• Special Features

  junction pattern arrangement: npn

• Voltage Rating In Volts Per Characteristic

  80.0 maximum breakdown voltage, collector-to-emitter, with specified circuit between base and emitter and 60.0 maximum breakdown voltage, collector-to-emitter, base open and 80.0 maximum breakdown voltage, collector-to-base, emitter open and 4.0 maximum