NSN: 5961-01-070-8652

Semiconductor Devices and Associated Hardware

SEMICONDUCTOR DEVICE,THYRISTOR

5961 - Semiconductor Devices and Associated Hardware

SEMICONDUCTOR DEVICE,THYRISTOR

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Technical Characteristics

  • Internal Junction Configuration

    pnpn

  • Mounting Method

    threaded stud

  • Features Provided

    hermetically sealed case

  • Voltage Rating In Volts Per Characteristic

    400.0 maximum reverse voltage, peak and 30.0 maximum breakover voltage, dc and 2.0 maximum gate trigger voltage, dc

  • Inclosure Material

    metal

  • Overall Length

    0.300 inches minimum and 0.400 inches maximum

  • Mounting Facility Quantity

    1

  • Internal Configuration

    junction contact

  • Joint Electronic Device Engineering Council/jedec/case Outline Designation

    to-64

  • Nominal Thread Size

    0.190 inches

  • Criticality Code Justification

    feat

  • Semiconductor Material

    silicon

  • Current Rating Per Characteristic

    4.70 amperes maximum average on-state current, 180 degrees conduction angle, average over a full 60-hz cycle

  • Special Features

    item must comply with reqt of desc production std no. l02589; for navy nuclear propulsion plant product only

  • Maximum Operating Temp Per Measurement Point

    150.0 deg celsius junction

  • Thread Series Designator

    unf

  • Terminal Type And Quantity

    1 threaded stud and 2 tab, solder lug

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AS6081 Methods

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