NSN: 5961-01-072-1556
Semiconductor Devices and Associated Hardware
TRANSISTOR
5961 - Semiconductor Devices and Associated Hardware
TRANSISTOR
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Technical Characteristics
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Inclosure Material
metal
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Overall Length
1.550 inches maximum
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Overall Height
0.450 inches maximum
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Internal Configuration
junction contact-darlington connected
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Channel Polarity And Control Type
n-channel junction type
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Internal Junction Configuration
npn
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~1
o emitter voltage 450vdc (vcex); collector to emitter voltage 450vdc (vcpl); emi
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~3
rent peak 30.0adc; base current-continuous 10.0adc; base current-peak 20.0adc; e
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~4
mitter current-continuous 25.0adc; emitter current-peak 50.0adc; total power dis
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~5
sipation 175watts; total power dissipation at tc=100 deg celsius; 100 watts oper
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~7
e; function to case 1.0 deg celsius w/maximum lead temp for soldering 275deg c
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Overall Width
1.050 inches maximum
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Semiconductor Material
silicon
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~2
tter to base voltage 9.0vdc; collector current-continuous 15.0adc; collector cur
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~6
ating and storage function -65 deg celsius to +200 deg celsius thermal resistanc
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Special Features
power transistor ratings collector to emitter voltage 400vdc (vceo); collector t
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Terminal Type And Quantity
2 uninsulated wire lead