NSN: 5961-01-080-1220

Technical Characteristics

• ~1

  and 4.0 maximum emitter to base voltage, stati

• Voltage Rating In Volts Per Characteristic

  33.0 maximum collector to emitter voltage/static/base open all transistor and 65.0 maximum collector to base voltage/static/emitter open all transistor and 65.0 maximum collector to emitter voltage, dc with base short-circuited to emitter all transistor

• Power Rating Per Characteristic

  140.0 watts small-signal input power, common-collector absolute all transistor

• Semiconductor Material

  silicon all transistor

• Inclosure Material

  ceramic all transistor

• Internal Junction Configuration

  npn all transistor

• Terminal Type And Quantity

  6 ribbon all transistor

• Internal Configuration

  junction contact all transistor

• Overall Height

  0.300 inches maximum all transistor

• Current Rating Per Characteristic

  3.00 amperes source cutoff current minimum all transistor and 8.00 amperes source cutoff current maximum all transistor

• Overall Length

  0.980 inches maximum all transistor

• Mounting Method

  unthreaded hole all transistor

• Component Name And Quantity

  4 transistor

• Maximum Operating Temp Per Measurement Point

  150.0 deg celsius junction all transistor

• Mounting Facility Quantity

  2 all transistor

• Field Force Effect Type

  electrostatic charge

• Test Data Document

  13499-352-1090 drawing (this is the basic governing drawing, such as a contractor drawing, original equipment manufacturer drawing, etc.; excludes any specification, standard or other document that may be referenced in a basic governing drawing)

• Special Features

  ceramic case contains beryllium oxide - handle and dispose iaw hazmat procedures.

• Component Function Relationship

  matched

• Overall Width

  0.865 inches maximum all transistor