NSN: 5961-01-089-5217

Semiconductor Devices and Associated Hardware

SEMICONDUCTOR DEVICE,THYRISTOR

5961 - Semiconductor Devices and Associated Hardware

SEMICONDUCTOR DEVICE,THYRISTOR

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Technical Characteristics

  • Inclosure Material

    metal

  • Overall Height

    0.190 inches maximum

  • Overall Width

    0.650 inches maximum

  • Internal Configuration

    junction contact

  • Joint Electronic Device Engineering Council/Jedec/Case Outline Designation

    to-220

  • Features Provided

    hermetically sealed case

  • Semiconductor Material

    silicon

  • Current Rating Per Characteristic

    8.00 amperes maximum on-state current,rms total and 200.00 amperes maximum peak on-state surge current

  • Terminal Type And Quantity

    3 uninsulated wire lead

  • Maximum Operating Temp Per Measurement Point

    100.0 deg celsius ambient air

  • Power Rating Per Characteristic

    16.0 watts maximum peak gate power dissipation

  • Voltage Rating In Volts Per Characteristic

    125.0 maximum nonrepetitive peak reverse voltage,maximum peak total value and 125.0 maximum nonrepetitive peak off-state voltage and 100.0 maximum repetitive peak reverse voltage and 100.0 maximum repetitive peak off-state voltage

  • Terminal Circle Diameter

    0.210 inches maximum

  • Mounting Method

    terminal

  • Internal Junction Configuration

    npn

  • Terminal Length

    0.580 inches maximum

  • Overall Length

    0.650 inches maximum

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