NSN: 5961-01-103-4618
Semiconductor Devices and Associated Hardware
TRANSISTOR
5961 - Semiconductor Devices and Associated Hardware
TRANSISTOR
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Technical Characteristics
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Overall Diameter
0.330 inches nominal
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Voltage Rating In Volts Per Characteristic
20.0 maximum breakdown voltage,drain-to-source,with all other terminals short-circuited to source and 20.0 maximum breakdown voltage,gate-to-source,with all other terminals short-circuited to source
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Terminal Type And Quantity
3 uninsulated wire lead
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Inclosure Material
metal
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Overall Length
0.250 inches nominal
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Terminal Length
0.400 inches minimum
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Internal Configuration
field effect
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Channel Polarity And Control Type
p-channel junction type
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Mounting Method
terminal
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Terminal Circle Diameter
0.200 inches nominal
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Features Provided
hermetically sealed case
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Semiconductor Material
silicon
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Current Rating Per Characteristic
50.00 milliamperes maximum gate current
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Power Rating Per Characteristic
200.0 milliwatts maximum total power dissipation
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Maximum Operating Temp Per Measurement Point
125.0 deg celsius junction