NSN: 5961-01-112-1827

Technical Characteristics

• Joint Electronic Device Engineering Council/Jedec/Case Outline Designation

  to-3

• Special Features

  junction pattern arrangement: pnp

• Overall Diameter

  0.875 inches maximum

• Internal Configuration

  junction contact

• Power Rating Per Characteristic

  200.0 watts small-signal input power, common-collector absolute

• Semiconductor Material

  silicon

• Voltage Rating In Volts Per Characteristic

  100.0 maximum breakdown voltage, collector to emitter, sustained

• Channel Polarity And Control Type (Non-Core)

  p-channel junction type

• Current Rating Per Characteristic

  30.00 amperes source cutoff current maximum

• Mounting Facility Quantity

  2

• Terminal Type And Quantity

  2 uninsulated wire lead and 1 case

• Maximum Operating Temp Per Measurement Point

  200.0 deg celsius junction

• Mounting Method

  unthreaded hole

• Inclosure Material

  metal

• Overall Length

  0.375 inches nominal