NSN: 5961-01-122-2554

Semiconductor Devices and Associated Hardware

TRANSISTOR

5961 - Semiconductor Devices and Associated Hardware

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Technical Characteristics

  • Joint Electronic Device Engineering Council/jedec/case Outline Designation

    to-3

  • Electrode Internally-Electrically Connected To Case

    collector

  • Voltage Rating In Volts Per Characteristic

    60.0 maximum breakdown voltage, collector-to-base, emitter open and 60.0 maximum breakdown voltage, collector-to-emitter, base open and 5.0 maximum breakdown voltage, emitter-to-base, collector open

  • Current Rating Per Characteristic

    500.00 milliamperes source cutoff current minimum and 10.00 amperes source cutoff current maximum

  • Internal Junction Configuration

    npn

  • Overall Diameter

    0.875 inches maximum

  • Internal Configuration

    junction contact

  • End Item Identification

    4920-01-054-8585 e/i fscm 81755

  • Features Provided

    hermetically sealed case

  • Semiconductor Material

    silicon

  • Terminal Type And Quantity

    1 case and 2 pin

  • Mounting Facility Quantity

    2

  • Maximum Operating Temp Per Measurement Point

    200.0 deg celsius junction

  • Power Rating Per Characteristic

    225.0 watts small-signal input power, common-collector minimum

  • Mounting Method

    unthreaded hole

  • Inclosure Material

    metal

  • Overall Length

    0.250 inches minimum and 0.450 inches maximum

Certified to
AS6081 Methods

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