NSN: 5961-01-262-9098

Technical Characteristics

• Special Features

  junction pattern arrangement: pn

• Overall Length

  0.250 inches maximum

• Internal Configuration

  point contact

• Mounting Method

  terminal

• Semiconductor Material

  gallium arsenide sulfide

• Terminal Type And Quantity

  2 uninsulated wire lead

• Power Rating Per Characteristic

  60.0 milliwatts small-signal input power, common-collector preset

• Overall Diameter

  0.155 inches nominal

• Voltage Rating In Volts Per Characteristic

  30.0 maximum collector to emitter voltage, dc and 5.0 maximum emitter to collector voltage, dc

• Inclosure Material

  plastic

• Maximum Operating Temp Per Measurement Point

  100.0 deg celsius ambient air

• Function For Which Designed

  phototransistor

• Terminal Length

  0.500 inches minimum

• Current Rating Per Characteristic

  100.00 nanoamperes source cutoff current maximum of standard range