NSN: 5961-01-315-7167

Semiconductor Devices and Associated Hardware

TRANSISTOR

5961 - Semiconductor Devices and Associated Hardware

TRANSISTOR

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Technical Characteristics

  • ~1

    data on certain environmental and performanc

  • Test Data Document

    81349-mil-s-19500 specification (includes engineering type bulletins, brochures,etc., that reflect specification type data in specification format; excludes commercial catalogs, industry directories, and similar trade publications, reflecting general type

  • Electrode Internally-Electrically Connected To Case

    collector

  • Terminal Type And Quantity

    3 uninsulated wire lead

  • Mounting Method

    terminal

  • Terminal Circle Diameter

    0.200 inches nominal

  • Voltage Rating In Volts Per Characteristic

    80.0 maximum collector-to-emitter, resistance between base and emitter and 100.0 maximum collector to base voltage/static/emitter open and 7.0 maximum emitter to base voltage, static, collector open

  • Power Rating Per Characteristic

    3.0 watts small-signal input power, common-collector preset

  • Overall Length

    0.260 inches maximum

  • Specification/Standard Data

    81349-mil-s-19500/225 government specification

  • Transfer Ratio

    300.0 maximum static forward current transfer ratio, common-emitter

  • Overall Diameter

    0.370 inches maximum

  • Internal Configuration

    junction contact

  • Special Features

    junction pattern arrangement: npn

  • Joint Electronic Device Engineering Council/Jedec/Case Outline Designation

    to-5

  • Semiconductor Material

    silicon

  • Current Rating Per Characteristic

    500.00 milliamperes source cutoff current maximum

  • Terminal Length

    0.500 inches minimum

  • Maximum Operating Temp Per Measurement Point

    200.0 deg celsius junction

  • Features Provided

    hermetically sealed case and quality assurance level tx

  • Inclosure Material

    metal

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