NSN: 5961-01-525-8945

Semiconductor Devices and Associated Hardware

TRANSISTOR

5961 - Semiconductor Devices and Associated Hardware

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Technical Characteristics

  • Mounting Method

    slot and slot and threaded hole

  • End Item Identification

    power unit, 0.8 kw, dc, 841-01.

  • Special Features

    vshort circuit rated ultrafast: optimized for high operating frequencies >5.0 khz, and short circuit rated to 10 us @ 125 deg. celsius, vge= 15 v. industry standard t0-247ac package. generation 4 insulated gate bipolar transistor.

  • Power Rating Per Characteristic

    160.0 watts small-signal input power, common-collector absolute

  • Overall Length

    33.9 millimeters minimum and 35.1 millimeters maximum

  • Voltage Rating In Volts Per Characteristic

    600.0 minimum breakdown voltage, collector-to-emitter, with base short-circuited to emitter and 18.0 minimum breakdown voltage, emitter to collector, base open

  • Overall Width

    15.3 millimeters minimum and 15.9 millimeters maximum

  • Mounting Facility Quantity

    3

  • Terminal Type And Quantity

    3 uninsulated wire lead

Certified to
AS6081 Methods

Implementing Quality Procurement

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We take every measure to ensure that we supply quality, authentic parts including a strict vendor selection process and rigorous product inspections..
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