NSN: 5962-01-051-3406

Technical Characteristics

• Memory Device Type

  rom

• Voltage Rating And Type Per Characteristic

  5.5 volts maximum power source

• Terminal Surface Treatment

  solder

• Case Outline Source And Designator

  m0-001-ae joint electron device engineering council

• Word Quantity

  256

• Input Circuit Pattern

  10 input

• Output Logic Form

  transistor-transistor logic

• Inclosure Configuration

  dual-in-line

• Inclosure Material

  ceramic and glass

• Features Provided

  hermetically sealed and monolithic and positive outputs and bipolar and 3-state output and w/enable and w/storage and w/buffered output and w/decoded output and w/disable and programmable and programmed

• Operating Temp Range

  -0.0 to 75.0 deg celsius

• Maximum Power Dissipation Rating

  625.0 milliwatts

• Body Height

  0.120 inches minimum and 0.160 inches maximum

• Body Length

  0.745 inches minimum and 0.785 inches maximum

• Terminal Type And Quantity

  16 printed circuit

• Test Data Document

  11530-311325 drawing

• Unpackaged Unit Weight

  2.2 grams

• Time Rating Per Chacteristic

  35.00 nanoseconds maximum propagation delay time, low to high level output and 35.00 nanoseconds maximum propagation delay time, high to low level output

• Bit Quantity

  1024

• End Item Identification

  cheyenne missile model 427m

• Storage Temp Range

  -65.0 to 150.0 deg celsius

• Body Width

  0.240 inches minimum and 0.280 inches maximum