NSN: 5962-01-076-9620

Technical Characteristics

• Body Width

  0.220 inches minimum and 0.310 inches maximum

• Inclosure Material

  ceramic and glass

• Input Circuit Pattern

  10 input

• (Non-Core Data) Bit Quantity

  1024

• (Non-Core Data) Word Quantity

  256

• Terminal Surface Treatment

  solder

• Time Rating Per Chacteristic

  75.00 nanoseconds maximum propagation delay time, low to high level output and 75.00 nanoseconds maximum propagation delay time, high to low level output

• Specification/standard Data

  81349-mil-m-38510/203 government specification

• Case Outline Source And Designator

  d-2 mil-m-38510

• Voltage Rating And Type Per Characteristic

  5.5 volts maximum power source

• Memory Device Type

  rom

• Definitive Government Spec/std Reference

  m38510/20301beb

• Manufacturers Code

  81349

• Non-Definitive Government Spec/std Reference

  mil-m-38510/203

• Test Data Document

  81349-mil-m-38510 specification

• Terminal Type And Quantity

  16 printed circuit

• Body Length

  0.840 inches maximum

• Body Height

  0.140 inches minimum and 0.185 inches maximum

• Maximum Power Dissipation Rating

  739.0 milliwatts

• Operating Temp Range

  -55.0 to 125.0 deg celsius

• Storage Temp Range

  -65.0 to 150.0 deg celsius

• Features Provided

  hermetically sealed and monolithic and positive outputs and bipolar and schottky and programmable and w/enable and w/decoded output and w/buffered output and w/open collector

• Inclosure Configuration

  dual-in-line

• Output Logic Form

  transistor-transistor logic