NSN: 5962-01-082-1229

Technical Characteristics

• Design Function And Quantity

  dual gate,and-or invert

• Inclosure Configuration

  dual-in-line

• Operating Temp Range

  m0.0/p70.0 deg celsius

• Maximum Power Dissipation Rating

  28.0 milliwatts

• Body Height

  0.200 inches maximum

• Terminal Surface Treatment

  solder dip

• Inclosure Material

  plastic

• Propagation Delay Time In Nanoseconds

  3.5 low-to-high level output minimum and 5.5 low-to-high level output maximum and 3.5 high-to-low level output minimum and 5.5 high-to-low level output maximum

• Case Outline Source And Designator

  to-116 joint electron device engineering council

• Power Source Dc Voltage In Volts And Polarity

  4.75 positive minimum and 5.25 positive maximum

• Input Circuit Pattern

  dual 2 wide 2 input

• Output Logic Form

  transistor-transistor logic

• Features Provided

  w/totem pole output

• Body Width

  0.240 inches minimum and 0.260 inches maximum

• Body Length

  0.710 inches minimum and 0.770 inches maximum

• Terminal Quantity

  14