NSN: 5962-01-098-7636

Technical Characteristics

• Features Provided

  burn in and hermetically sealed and high speed and compatible dtl and compatible rtl

• Maximum Power Dissipation Rating

  900.0 milliwatts

• Inclosure Material

  ceramic and metal

• Design Function And Quantity

  2 driver, switch, field effect transistor

• Body Height

  0.050 inches minimum and 0.180 inches maximum

• Inclosure Configuration

  dual-in-line

• Body Width

  0.275 inches minimum and 0.310 inches maximum

• Storage Temp Range

  -65.0/+150.0 deg celsius

• Test Data Document

  96906-mil-std-883 standard (includes industry or association standards, individual manufactureer standards, etc.).

• Body Length

  0.740 inches minimum and 0.830 inches maximum

• Terminal Surface Treatment

  tin

• Input Circuit Pattern

  dual 1 input and dual 2 channel

• Operating Temp Range

  -55.0/+125.0 deg celsius

• Time Rating Per Chacteristic

  300.00 nanoseconds maximum propagation delay time, low to high level output and 350.00 nanoseconds maximum propagation delay time, high to low level output