NSN: 5962-01-099-2862

Technical Characteristics

• Body Length

  0.940 inches maximum

• Body Width

  0.220 inches minimum and 0.310 inches maximum

• Body Height

  0.185 inches maximum

• Operating Temp Range

  m55.0/p125.0 deg celsius

• Storage Temp Range

  m65.0/p150.0 deg celsius

• Inclosure Material

  ceramic

• Output Logic Form

  transistor-transistor logic

• Input Circuit Pattern

  12 input

• Word Quantity

  1024

• Terminal Surface Treatment

  solder

• Voltage Rating And Type Per Characteristic

  m0.5 volts minimum power source and 7.0 volts maximum power source

• Memory Device Type

  prom

• Test Data Document

  81349-mil-m-38510 specification

• Terminal Type And Quantity

  18 printed circuit

• Specification/standard Data

  81349-mil-m-38510/206/usaf/government specification

• Maximum Power Dissipation Rating

  794.0 milliwatts

• Features Provided

  hermetically sealed and monolithic and schottky and bipolar and programmable and programmed and 3-state output

• Inclosure Configuration

  dual-in-line

• Bit Quantity

  4096

• Time Rating Per Chacteristic

  85.00 nanoseconds maximum propagation delay time,low to high level output and 85.00 nanoseconds maximum propagation delay time,high to low level output

• Unpackaged Unit Weight

  5.0 grams