NSN: 5962-01-102-3117

Technical Characteristics

• Word Quantity (Non-Core)

  64

• Time Rating Per Chacteristic

  140.00 nanoseconds maximum delay

• Input Circuit Pattern

  8 input

• Memory Device Type

  prom

• Maximum Power Dissipation Rating

  575.0 milliwatts

• Storage Temp Range

  -65.0/+150.0 deg celsius

• Bit Quantity (Non-Core)

  512

• Case Outline Source And Designator

  d-3 mil-m-38510

• Inclosure Material

  ceramic

• Body Width

  0.610 inches maximum

• Terminal Surface Treatment

  solder

• Test Data Document

  81205-204-15515 drawing (this is the basic governing drawing, such as a contractor drawing, original equipment manufacturer drawing, etc.; excludes any specification, standard or other document that may be referenced in a basic governing drawing)

• Voltage Rating And Type Per Characteristic

  5.5 volts maximum input

• Inclosure Configuration

  dual-in-line

• Features Provided

  burn in and monolithic and bipolar and hermetically sealed and programmed

• Terminal Type And Quantity

  24 printed circuit

• Body Length

  1.290 inches maximum

• Output Logic Form

  transistor-transistor logic

• Body Height

  0.210 inches maximum

• Operating Temp Range

  -55.0/+125.0 deg celsius