NSN: 5962-01-111-1251

Technical Characteristics

• Storage Temp Range

  -65.0/+150.0 deg celsius

• Memory Device Type

  rom

• Body Length

  0.840 inches maximum

• Body Width

  0.220 inches minimum and 0.310 inches maximum

• Inclosure Material

  ceramic

• Terminal Surface Treatment

  solder

• Operating Temp Range

  +0.0/+75.0 deg celsius

• Inclosure Configuration

  dual-in-line

• Voltage Rating And Type Per Characteristic

  5.5 volts maximum power source

• Word Quantity (Non-Core)

  512

• Output Logic Form

  transistor-transistor logic

• Case Outline Source And Designator

  d-2 mil-m-38510

• Body Height

  0.185 inches maximum

• Features Provided

  monolithic and hermetically sealed and programmable and 3-state output and w/buffered output

• Bit Quantity (Non-Core)

  2048

• Time Rating Per Chacteristic

  50.00 nanoseconds maximum propagation delay time, low to high level output and 50.00 nanoseconds maximum propagation delay time, high to low level output

• Input Circuit Pattern

  10 input

• Terminal Type And Quantity

  16 printed circuit