NSN: 5962-01-171-5589

Technical Characteristics

• Memory Device Type

  rom

• Inclosure Material

  ceramic

• Terminal Surface Treatment

  solder

• Input Circuit Pattern

  12 input

• Features Provided

  bipolar and programmable and 3-state output

• Maximum Power Dissipation Rating

  715.0 milliwatts

• Word Quantity (Non-Core)

  2048

• Output Logic Form

  transistor-transistor logic

• Body Height

  0.085 inches maximum

• Body Length

  0.520 inches maximum

• Operating Temp Range

  -55.0/+125.0 deg celsius

• Inclosure Configuration

  flat pack

• Terminal Type And Quantity

  18 flat leads

• Voltage Rating And Type Per Characteristic

  -0.5 volts minimum power source and 7.0 volts maximum power source

• Time Rating Per Chacteristic

  125.00 nanoseconds maximum propagation delay time, low to high level output and 125.00 nanoseconds maximum propagation delay time, high to low level output

• Body Width

  0.390 inches maximum

• Test Data Document

  82577-932905 standard (includes industry or association standards, individual manufactureer standards, etc.).

• Bit Quantity (Non-Core)

  8192

• Storage Temp Range

  -65.0/+150.0 deg celsius