NSN: 5962-01-179-0531

Technical Characteristics

• Output Logic Form

  bipolar metal-oxide semiconductor

• Word Quantity (Non-Core)

  1024

• Operating Temp Range

  -55.0/+125.0 deg celsius

• Bit Quantity (Non-Core)

  8192

• Storage Temp Range

  -65.0/+150.0 deg celsius

• Memory Device Type

  rom

• Inclosure Material

  ceramic

• Body Width

  0.610 inches maximum

• Terminal Surface Treatment

  solder

• Voltage Rating And Type Per Characteristic

  7.0 volts maximum power source

• Features Provided

  burn in and bipolar and monolithic and programmed

• Inclosure Configuration

  dual-in-line

• Maximum Power Dissipation Rating

  830.0 milliwatts

• Terminal Type And Quantity

  24 printed circuit

• Input Circuit Pattern

  14 input

• Body Length

  1.290 inches maximum

• Body Height

  0.170 inches maximum