NSN: 5962-01-188-8747

Technical Characteristics

• Maximum Power Dissipation Rating

  440.0 milliwatts

• Voltage Rating And Type Per Characteristic

  7.0 volts maximum power source

• Terminal Surface Treatment

  solder

• Inclosure Material

  ceramic

• Memory Device Type

  rom

• Storage Temp Range

  -65.0/+150.0 deg celsius

• Test Data Document

  96906-mil-std-883 standard (includes industry or association standards, individual manufactureer standards, etc.).

• Input Circuit Pattern

  19 input

• Time Rating Per Chacteristic

  400.00 nanoseconds maximum propagation delay time, low to high level output and 400.00 nanoseconds maximum propagation delay time, high to low level output

• Body Height

  0.200 inches maximum

• Operating Temp Range

  -55.0/+125.0 deg celsius

• Word Quantity (Non-Core)

  1024

• Bit Quantity (Non-Core)

  4096

• Terminal Type And Quantity

  22 printed circuit

• Output Logic Form

  transistor-transistor logic

• Body Length

  1.060 inches minimum and 1.110 inches maximum

• Features Provided

  burn in and w/enable and hermetically sealed and low power and high performance and bidirectional

• Inclosure Configuration

  dual-in-line

• Body Width

  0.380 inches minimum and 0.400 inches maximum