NSN: 5962-01-253-7431

Technical Characteristics

• Output Logic Form

  transistor-transistor logic

• Maximum Power Dissipation Rating

  830.0 milliwatts

• Inclosure Configuration

  dual-in-line

• Terminal Type And Quantity

  20 printed circuit

• Test Data Document

  14933-5962-86707 drawing (this is the basic governing drawing, such as a contractor drawing, original equipment manufacturer drawing, etc.; excludes any specification, standard or other document that may be referenced in a basic governing drawing)

• Body Length

  1.060 inches maximum

• Terminal Surface Treatment

  solder

• Inclosure Material

  ceramic

• Body Width

  0.220 inches minimum and 0.310 inches maximum

• Design Function And Quantity

  8 driver, memory

• Case Outline Source And Designator

  d-8 mil-m-38510

• Storage Temp Range

  -65.0/+150.0 deg celsius

• Input Circuit Pattern

  10 input

• Special Features

  nuclear hardness critical items

• Features Provided

  burn in and 3-state output and monolithic and hermetically sealed and dynamic

• Voltage Rating And Type Per Characteristic

  0.5 volts minimum power source and 7.0 volts maximum power source

• Time Rating Per Chacteristic

  30.00 nanoseconds maximum propagation delay time, low to high level output and 30.00 nanoseconds maximum propagation delay time, high to low level output

• Body Height

  0.185 inches maximum

• Nuclear Hardness Critical Feature

  hardened

• Operating Temp Range

  -55.0/+125.0 deg celsius